HARRICK PLASMA

Leakage current by Frenkel-Poole emission on benzotriazole and benzothiadiazole based organic devices

In this study three different organic semiconductors were used in the fabrication of ITO/PEDOT:PSS/Polymer:PCBM/LiF/Al configuration. Reverse current densityvoltage (JrV) measurements of the samples were investigated to define the reverse-bias leakage current mechanisms on benzotriazole and benzothiadiazole based organic devices. Our results indicate that the JrV plot behaviors are given by linear dependence between In (J) and V1/2, where Jr is the reverse current density, and V is the applied voltage. This behavior is well known as the PooleFrenkel (PF) effect where it is found to be dominating in the reverse-bias leakage current.

Yildiz, D.E., M. Karakus, L. Toppare, A. Cirpan

Materials Science in Semiconductor Processing

28

84-88

2014

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